NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
100
90
10 V
5.2 V
100
V DS ≥ 10 V
80 T J = 25 ° C
70
5.0 V
75
60
50
V GS = 7 V ? 5.5 V
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
4.5 V
4.0 V
3.5 V
3
25
0
2
T J = 100 ° C
T J = 25 ° C
3
T J = ? 55 ° C
4
5
6
0.021
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.05
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.019
I D = 30 A
T J = 25 ° C
0.04
T J = 25 ° C
0.017
0.015
0.03
0.013
0.011
0.009
0.02
0.01
V GS = 5 V
V GS = 10 V
0.007
4
5
6
7
8
9
10
0
10
15
20
25
30
35
40
45
50
1.9
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Drain Current
10,000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
1.6
1.5
I D = 51 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.4
1.3
1.2
1.1
1.0
0.9
0.8
100
T J = 100 ° C
0.7
? 50 ? 25
0
25
50
75
100
125
150
175
10
2
12
22
32
42
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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相关代理商/技术参数
NTD5806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
NTD5806NT4G 功能描述:MOSFET NFET DPAK 40V 33A 19mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5807N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK
NTD5807NT4G 功能描述:MOSFET NFET DPAK 40V 23A 31mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5862N-1G 功能描述:MOSFET NFET IPAK 60V 102A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD5862NT4G 功能描述:MOSFET NFET DPAK 60V 102A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube